Infineon Technologies-IGW100N60H3FKSA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	140 A
Current - Collector Pulsed (Icm):	300 A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 100A
Power - Max:	714 W
Switching Energy:	3.7mJ (on), 1.9mJ (off)
Input Type:	Standard
Gate Charge:	625 nC
Td (on/off) @ 25°C:	30ns/265ns
Test Condition:	400V, 100A, 3.5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

Infineon Technologies IGW100N60H3FKSA1