Infineon Technologies-IGU04N60TAKMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	8 A
Current - Collector Pulsed (Icm):	12 A
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 4A
Power - Max:	42 W
Switching Energy:	61µJ (on), 84µJ (off)
Input Type:	Standard
Gate Charge:	27 nC
Td (on/off) @ 25°C:	14ns/164ns
Test Condition:	400V, 4A, 47Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	PG-TO251-3

Infineon Technologies IGU04N60TAKMA1