IGP01N120H2
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Infineon Technologies IGP01N120H2

Manufacturer No:
IGP01N120H2
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IGP01N120H2 Datasheet
ECAD Model:
-
Description:
POWER BIPOLAR TRANSISTOR NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):3.2 A
Current - Collector Pulsed (Icm):3.5 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 1A
Power - Max:28 W
Switching Energy:140µJ
Input Type:Standard
Gate Charge:8.6 nC
Td (on/off) @ 25°C:13ns/370ns
Test Condition:800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:PG-TO220-3-1
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Similar Products

Part Number IGP01N120H2 IGP03N120H2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 3.2 A 9.6 A
Current - Collector Pulsed (Icm) 3.5 A 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 1A 2.8V @ 15V, 3A
Power - Max 28 W 62.5 W
Switching Energy 140µJ 290µJ
Input Type Standard Standard
Gate Charge 8.6 nC 22 nC
Td (on/off) @ 25°C 13ns/370ns 9.2ns/281ns
Test Condition 800V, 1A, 241Ohm, 15V 800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1

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