IGO60R070D1AUMA1
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Infineon Technologies IGO60R070D1AUMA1

Manufacturer No:
IGO60R070D1AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IGO60R070D1AUMA1 Datasheet
ECAD Model:
-
Description:
GANFET N-CH 600V 31A 20DSO
Delivery:
Payment:
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iso13485

Product Attributes

FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):-10V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-DSO-20-85
Package / Case:20-PowerSOIC (0.433", 11.00mm Width)
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$15.28
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Similar Products

Part Number IGO60R070D1AUMA1 IGOT60R070D1AUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology GaNFET (Gallium Nitride) GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id 1.6V @ 2.6mA 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) -10V -10V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 400 V 380 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-DSO-20-85 PG-DSO-20-87
Package / Case 20-PowerSOIC (0.433", 11.00mm Width) 20-PowerSOIC (0.433", 11.00mm Width)

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