Infineon Technologies-IGLD60R070D1AUMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-10V
Input Capacitance (Ciss) (Max) @ Vds:	380 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	114W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-LSON-8-1
Package / Case:	8-LDFN Exposed Pad

Infineon Technologies IGLD60R070D1AUMA1