Infineon Technologies-IGD06N65T6ARMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	9 A
Current - Collector Pulsed (Icm):	18 A
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 3A
Power - Max:	31 W
Switching Energy:	60µJ (on), 30µJ (off)
Input Type:	Standard
Gate Charge:	13.7 nC
Td (on/off) @ 25°C:	15ns/35ns
Test Condition:	400V, 3A, 47Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3

Infineon Technologies IGD06N65T6ARMA1