Infineon Technologies-IGD01N120H2BUMA1 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	3.2 A
Current - Collector Pulsed (Icm):	3.5 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 1A
Power - Max:	28 W
Switching Energy:	140µJ
Input Type:	Standard
Gate Charge:	8.6 nC
Td (on/off) @ 25°C:	13ns/370ns
Test Condition:	800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	PG-TO252-3-11

Infineon Technologies IGD01N120H2BUMA1