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| Part Number | IDWD10G120C5XKSA1 | IDWD20G120C5XKSA1 | IDWD30G120C5XKSA1 | IDWD40G120C5XKSA1 | IDWD15G120C5XKSA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Current - Average Rectified (Io) | 34A (DC) | 62A (DC) | 87A (DC) | 110A (DC) | 49A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A | 1.65 V @ 20 A | 1.65 V @ 30 A | 1.65 V @ 40 A | 1.65 V @ 15 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 1200 V | 166 µA @ 1200 V | 248 µA @ 1200 V | 332 µA @ 1200 V | 124 µA @ 1200 V |
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz | 1368pF @ 1V, 1MHz | 1980pF @ 1V, 1MHz | 2592pF @ 1V, 1MHz | 1050pF @ 1V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-2 | TO-247-2 | TO-247-2 | TO-247-2 | TO-247-2 |
| Supplier Device Package | PG-TO247-2 | PG-TO247-2 | PG-TO247-2 | PG-TO247-2 | PG-TO247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
