IDW40E65D1
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Infineon Technologies IDW40E65D1

Manufacturer No:
IDW40E65D1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDW40E65D1 Datasheet
ECAD Model:
-
Description:
IDW40E65 - SILICON POWER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):80A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 40 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):129 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number IDW40E65D1 IDW40E65D2   IDW30E65D1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Standard - Standard
Voltage - DC Reverse (Vr) (Max) 650 V - 650 V
Current - Average Rectified (Io) 80A - 60A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 40 A - 1.7 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 129 ns - 115 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V - 40 µA @ 650 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole - Through Hole
Package / Case TO-247-3 - TO-247-3
Supplier Device Package PG-TO247-3-1 - PG-TO247-3-1
Operating Temperature - Junction -40°C ~ 175°C - -40°C ~ 175°C

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