IDW30E60AFKSA1
  • Share:

Infineon Technologies IDW30E60AFKSA1

Manufacturer No:
IDW30E60AFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDW30E60AFKSA1 Datasheet
ECAD Model:
-
Description:
IDW30E60 - SILICON POWER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):60A (DC)
Voltage - Forward (Vf) (Max) @ If:2 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):143 ns
Current - Reverse Leakage @ Vr:40 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

-
274

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDW30E60AFKSA1 IDW30E60FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 60A (DC) 60A (DC)
Voltage - Forward (Vf) (Max) @ If 2 V @ 30 A 2 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 143 ns 143 ns
Current - Reverse Leakage @ Vr 40 µA @ 600 V 40 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

SJPL-L4VR
SJPL-L4VR
Sanken
DIODE GEN PURP 400V 3A SJP
S4K V7G
S4K V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 4A DO214AB
IV1D06006O2
IV1D06006O2
Inventchip
SIC DIODE, 650V 6A, TO-220-2
RS1PDHM3_A/I
RS1PDHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE 100V 1A DO-220AA
S4G
S4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
SSL110A-F1-0000HF
SSL110A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 100V 1A DO214AC
C3D03065E-TR
C3D03065E-TR
Wolfspeed, Inc.
DIODE SCHOTTKY 650V 11.5A TO252
VS-1N5818TR
VS-1N5818TR
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1A DO204AL
STTH212RL
STTH212RL
STMicroelectronics
DIODE GEN PURP 1.2KV 2A DO201AD
1N4007GPP TR
1N4007GPP TR
Central Semiconductor Corp
DIODE GEN PURP 1KV 1A DO41
D251K18BXPSA1
D251K18BXPSA1
Infineon Technologies
DIODE GEN PURP 1.8KV 255A
BAS116HYT116
BAS116HYT116
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,

Related Product By Brand

BAS16UE6327HTSA1
BAS16UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
IRF7811WTR
IRF7811WTR
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
F3L300R12PT4PB26BOSA1
F3L300R12PT4PB26BOSA1
Infineon Technologies
IGBT MODULE MED POWER ECONO4-1
SIGC61T60NCX1SA1
SIGC61T60NCX1SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
BGF 109L E6328
BGF 109L E6328
Infineon Technologies
FILTER LC 28PF (TOTAL) ESD SMD
AUIPS7145RTRL
AUIPS7145RTRL
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 DPAK
1EDI60I12AFXUMA1
1EDI60I12AFXUMA1
Infineon Technologies
IC IGBT DVR 1200V DSO8
CY23FS04ZXI-5T
CY23FS04ZXI-5T
Infineon Technologies
IC CLOCK GENERATOR
CY8C4146FNI-S423T
CY8C4146FNI-S423T
Infineon Technologies
IC MCU 32BIT 64KB FLASH 35WLCSP
MB96F673ABPMC1-GSE1
MB96F673ABPMC1-GSE1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
CY7C1021B-12VC
CY7C1021B-12VC
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44SOJ
S34MS01G104BHV010
S34MS01G104BHV010
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA