IDW20G65C5BXKSA1
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Infineon Technologies IDW20G65C5BXKSA1

Manufacturer No:
IDW20G65C5BXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDW20G65C5BXKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 10A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io) (per Diode):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:180 µA @ 650 V
Operating Temperature - Junction:-55°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3
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Similar Products

Part Number IDW20G65C5BXKSA1 IDW24G65C5BXKSA1   IDW40G65C5BXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) (per Diode) 10A (DC) 12A (DC) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 12 A 1.7 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 180 µA @ 650 V 190 µA @ 650 V 210 µA @ 650 V
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3

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