IDW10S120FKSA1
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Infineon Technologies IDW10S120FKSA1

Manufacturer No:
IDW10S120FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDW10S120FKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 1200V 10A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:240 µA @ 1200 V
Capacitance @ Vr, F:580pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-41
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDW10S120FKSA1 IDW15S120FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 10A (DC) 15A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 15 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 240 µA @ 1200 V 305 µA @ 1200 V
Capacitance @ Vr, F 580pF @ 1V, 1MHz 870pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-41 PG-TO247-3
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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