IDW10G65C5FKSA1
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Infineon Technologies IDW10G65C5FKSA1

Manufacturer No:
IDW10G65C5FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDW10G65C5FKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 10A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:400 µA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-41
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDW10G65C5FKSA1 IDW10G65C5XKSA1   IDW30G65C5FKSA1   IDW40G65C5FKSA1   IDW12G65C5FKSA1   IDW16G65C5FKSA1   IDW20G65C5FKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 10A (DC) 10A (DC) 30A (DC) 40A (DC) 12A (DC) 16A (DC) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 10 A 1.7 V @ 30 A 1.7 V @ 40 A 1.7 V @ 12 A 1.7 V @ 16 A 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 400 µA @ 650 V 180 µA @ 650 V 1.1 mA @ 650 V 1.4 mA @ 650 V 500 µA @ 650 V 600 µA @ 650 V 700 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz 860pF @ 1V, 1MHz 1140pF @ 1V, 1MHz 360pF @ 1V, 1MHz 470pF @ 1V, 1MHz 590pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-41 PG-TO247-3 PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-41 PG-TO247-3-1 PG-TO247-3-1
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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