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| Part Number | IDW10G120C5BFKSA1 | IDW30G120C5BFKSA1 | IDW15G120C5BFKSA1 | IDW40G120C5BFKSA1 | IDW20G120C5BFKSA1 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active | Active |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 17A | 44A (DC) | 24A (DC) | 55A (DC) | 31A |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 5 A | 1.65 V @ 15 A | 1.6 V @ 7.5 A | 1.65 V @ 20 A | 1.65 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | - | - | - | - |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V | 124 µA @ 1200 V | 62 µA @ 1200 V | 166 µA @ 1200 V | 83 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 | PG-TO247-3 | PG-TO247-3-41 | PG-TO247-3 | PG-TO247-3 |
