IDV30E65D2XKSA1
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Infineon Technologies IDV30E65D2XKSA1

Manufacturer No:
IDV30E65D2XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDV30E65D2XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 650V 30A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):30A (DC)
Voltage - Forward (Vf) (Max) @ If:2.2 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):42 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:PG-TO220-2 Full Pack
Operating Temperature - Junction:-40°C ~ 175°C
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$2.53
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Similar Products

Part Number IDV30E65D2XKSA1 IDP30E65D2XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 30A (DC) 60A (DC)
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 30 A 2.2 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 42 ns 42 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2
Supplier Device Package PG-TO220-2 Full Pack PG-TO220-2-1
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

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