IDP18E120XKSA1
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Infineon Technologies IDP18E120XKSA1

Manufacturer No:
IDP18E120XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDP18E120XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 31A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):31A (DC)
Voltage - Forward (Vf) (Max) @ If:2.15 V @ 18 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):195 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number IDP18E120XKSA1 IDP12E120XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 31A (DC) 28A (DC)
Voltage - Forward (Vf) (Max) @ If 2.15 V @ 18 A 2.15 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 195 ns 150 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V 100 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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