IDP08E65D2XKSA1
  • Share:

Infineon Technologies IDP08E65D2XKSA1

Manufacturer No:
IDP08E65D2XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDP08E65D2XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 650V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.3 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):40 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$1.41
56

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDP08E65D2XKSA1 IDV08E65D2XKSA1   IDP08E65D1XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.3 V @ 3 A 2.3 V @ 8 A 1.7 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 40 ns 40 ns 80 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

US1MFA
US1MFA
onsemi
DIODE GEN PURP 1KV 1A SOD123FA
SR520 A0G
SR520 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 5A DO201AD
UF1004_T0_00001
UF1004_T0_00001
Panjit International Inc.
ULTRA FAST RECOVERY RECTIFIERS
CUS10S30,H3F
CUS10S30,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A USC
SS24S-M3/5AT
SS24S-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 2A 40V DO-214AC
CDBB160LR-HF
CDBB160LR-HF
Comchip Technology
DIODE SCHOTTKY 60V 1A DO214AA
PDR5KF-13
PDR5KF-13
Diodes Incorporated
DIODE GEN PURP 800V 5A POWERDI5
VS-MBRB1635PBF
VS-MBRB1635PBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 16A D2PAK
AS4PDHM3/86A
AS4PDHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2.4A TO277A
IDH08G65C5XKSA1
IDH08G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 8A TO220-2
SS14LHR3G
SS14LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SUB SMA
1SS400UNTE61
1SS400UNTE61
Rohm Semiconductor
DIODE GENERAL PURPOSE SMD

Related Product By Brand

BCW60B
BCW60B
Infineon Technologies
TRANS NPN 32V 0.1A SOT23-3
AUIRLU3114Z-701TRL
AUIRLU3114Z-701TRL
Infineon Technologies
AUIRLU3114Z - 20V-40V N-CHANNEL
IPN50R800CEATMA1
IPN50R800CEATMA1
Infineon Technologies
MOSFET N-CH 500V 7.6A SOT223
IRF7421D1
IRF7421D1
Infineon Technologies
MOSFET N-CH 30V 5.8A 8SO
TLE9833QX
TLE9833QX
Infineon Technologies
MCU WITH LIN & POWER SWITCHES
AUIRS2334S
AUIRS2334S
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 20SOIC
ISP752RFUMA1
ISP752RFUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
TLE4997E2
TLE4997E2
Infineon Technologies
PROGRAMMABLE HALL EFFECT SENSOR
TLI49462LHALA1
TLI49462LHALA1
Infineon Technologies
MAGNETIC SWITCH UNIPOLAR SSO-3-2
MB91F469GBPB-GSER-270570
MB91F469GBPB-GSER-270570
Infineon Technologies
IC MCU 32B 2.112MB FLASH 320PBGA
MB95F128MBPMC-GE1
MB95F128MBPMC-GE1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 100LQFP
CY7110
CY7110
Infineon Technologies
CY7110 EZ-PD PMG1-S0 PROTOTYPING