IDP08E65D2XKSA1
  • Share:

Infineon Technologies IDP08E65D2XKSA1

Manufacturer No:
IDP08E65D2XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDP08E65D2XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 650V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.3 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):40 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$1.41
56

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDP08E65D2XKSA1 IDV08E65D2XKSA1   IDP08E65D1XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 2.3 V @ 3 A 2.3 V @ 8 A 1.7 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 40 ns 40 ns 80 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

SS13MHRSG
SS13MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MICRO SMA
ES3HB R5G
ES3HB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
NTE5878
NTE5878
NTE Electronics, Inc
R-400PRV 12A CATH CASE
2A06GH
2A06GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
SK33AH
SK33AH
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AC
CDBFN1200-HF
CDBFN1200-HF
Comchip Technology
DIODE SCHOTTKY 200V 1A SOD323
VB20100SG-E3/4W
VB20100SG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 100V TO-263AB
SS36/7T
SS36/7T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A DO214AB
2A06-T
2A06-T
Diodes Incorporated
DIODE GEN PURP 800V 2A DO15
S1KHE3/5AT
S1KHE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO214AC
1N5819HW-7-F-79
1N5819HW-7-F-79
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
RBQ30TB45BNZC9
RBQ30TB45BNZC9
Rohm Semiconductor
RBQ30TB45BNZ IS SCHOTTKY BARRIER

Related Product By Brand

S2GOPRESSUREDPS368TOBO1
S2GOPRESSUREDPS368TOBO1
Infineon Technologies
S2GO PRESSURE DPS368
IPI65R190CFDXKSA2
IPI65R190CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 17.5A TO262-3
PBL38621/2SOT
PBL38621/2SOT
Infineon Technologies
IC TELECOM INTERFACE PDSO-24
CY8C20247-24LKXIT
CY8C20247-24LKXIT
Infineon Technologies
IC CAPSENCE 16K FLASH 16QFN
MB90427GCPF-GS-169
MB90427GCPF-GS-169
Infineon Technologies
IC MCU 16BIT 64KB MROM 100QFP
MB90025FPMT-GS-181E1
MB90025FPMT-GS-181E1
Infineon Technologies
IC MCU 120LQFP
MB96F313ASBPMC-GSE2
MB96F313ASBPMC-GSE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
CY7C421-20VXCT
CY7C421-20VXCT
Infineon Technologies
IC ASYNC FIFO MEM 512X9 28-SOJ
S29GL512T10FHI020
S29GL512T10FHI020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA
S25FL064LABMFA010
S25FL064LABMFA010
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8SOIC
S25FL512SAGMFAR10
S25FL512SAGMFAR10
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
CYDC064B08-55AXI
CYDC064B08-55AXI
Infineon Technologies
IC SRAM 64KBIT PARALLEL 100TQFP