IDP08E65D1XKSA1
  • Share:

Infineon Technologies IDP08E65D1XKSA1

Manufacturer No:
IDP08E65D1XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDP08E65D1XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 650V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):80 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

$1.90
408

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDP08E65D1XKSA1 IDP08E65D2XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 650 V 650 V
Current - Average Rectified (Io) 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A 2.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns 40 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

SD1206T040S1R0
SD1206T040S1R0
KYOCERA AVX
DIODE SCHOTTKY 40V 1A 1206
SBR140LP-7
SBR140LP-7
Diodes Incorporated
DIODE SBR 40V 1A 3DFN
1N4448W-G3-18
1N4448W-G3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BYG22D-M3/TR3
BYG22D-M3/TR3
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 200V 2A DO214AC
AM01AV1
AM01AV1
Sanken
DIODE GEN PURP 600V 1A AXIAL
SS22LHR3G
SS22LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A SUB SMA
VS-72HFR80
VS-72HFR80
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 70A DO203AB
HFA08TB60STRR
HFA08TB60STRR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A D2PAK
1N5391S-T
1N5391S-T
Diodes Incorporated
DIODE GEN PURP 50V 1.5A DO41
CD214A-F1100
CD214A-F1100
Bourns Inc.
DIODE GEN PURP 100V 1A DO214AC
SS13LHRTG
SS13LHRTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
D650S14TXPSA1
D650S14TXPSA1
Infineon Technologies
DIODE GEN PURP 1.4KV 620A

Related Product By Brand

BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
IRF1404LPBF
IRF1404LPBF
Infineon Technologies
MOSFET N-CH 40V 162A TO262
IPU50R950CEAKMA1
IPU50R950CEAKMA1
Infineon Technologies
MOSFET N-CH 500V 4.3A TO251-3
SAF-XC878-16FFI 5V AA
SAF-XC878-16FFI 5V AA
Infineon Technologies
IC MCU 8BIT 64KB FLASH 64LQFP
IRSM005-800MHTR
IRSM005-800MHTR
Infineon Technologies
IC GATE DRIVER 40V QFN
AUIR3316S-INF
AUIR3316S-INF
Infineon Technologies
LATCH BASED PERIPHERAL DRIVER, 1
CY8CTMA884AA-23T
CY8CTMA884AA-23T
Infineon Technologies
IC TRUETOUCH CAPSENSE 100TQFP
S6E2C48L0AGL2000A
S6E2C48L0AGL2000A
Infineon Technologies
IC MCU 32BIT 1MB FLASH 216LQFP
MB90F428GAVPMC3-GSE1
MB90F428GAVPMC3-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
MB96F385RSAPMC-GS-N2E2
MB96F385RSAPMC-GS-N2E2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 120LQFP
CY7C1568XV18-633BZXC
CY7C1568XV18-633BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S34MS01G204BHA013
S34MS01G204BHA013
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA