IDP04E120
  • Share:

Infineon Technologies IDP04E120

Manufacturer No:
IDP04E120
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDP04E120 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 11.2A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):11.2A (DC)
Voltage - Forward (Vf) (Max) @ If:2.15 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):115 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

-
354

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDP04E120 IDP09E120  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 11.2A (DC) 23A (DC)
Voltage - Forward (Vf) (Max) @ If 2.15 V @ 4 A 2.15 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 115 ns 140 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V 100 µA @ 1200 V
Capacitance @ Vr, F - -
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

IDDD20G65C6XTMA1
IDDD20G65C6XTMA1
Infineon Technologies
DIODE SCHOT 650V 51A HDSOP-10-1
SS10P4-M3/87A
SS10P4-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 10A TO277A
PR1504-T
PR1504-T
Diodes Incorporated
DIODE GEN PURP 400V 1.5A DO15
BYG24J-M3/TR
BYG24J-M3/TR
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1.5A
FFSH3065ADN-F155
FFSH3065ADN-F155
onsemi
650V 30A SIC SBD
10ETF06STRL
10ETF06STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 10A D2PAK
MBR3100
MBR3100
onsemi
DIODE SCHOTTKY 100V 3A DO201AD
ESH2DHE3/52T
ESH2DHE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
SS310L R3G
SS310L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
SR1204HA0G
SR1204HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 12A DO201AD
RB160VAM-60TR
RB160VAM-60TR
Rohm Semiconductor
DIODE SCHOTTKY 60V 1A TUMD2M
SCS215AGC
SCS215AGC
Rohm Semiconductor
DIODE SCHOTTKY 650V 15A TO220AC

Related Product By Brand

BSZ096N10LS5ATMA1
BSZ096N10LS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 40A TSDSON
IPB060N15N5ATMA1
IPB060N15N5ATMA1
Infineon Technologies
MOSFET N-CH 150V 136A TO263-7
IPP048N04NG
IPP048N04NG
Infineon Technologies
IPP048N04 - 12V-300V N-CHANNEL P
IPB80N06S209ATMA1
IPB80N06S209ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
AUIRGF66524D0
AUIRGF66524D0
Infineon Technologies
IGBT 600V 60A 214W TO-247AC
PSF21150HV1.4
PSF21150HV1.4
Infineon Technologies
IPAC-X ISDN PC ADAPTER CIRCUIT
MOSFET3-KIT
MOSFET3-KIT
Infineon Technologies
30V FET PQFN5X6 80PC(30V 10EACH)
S6E2HE6G0AGV2B000
S6E2HE6G0AGV2B000
Infineon Technologies
IC MCU 32BIT 544KB FLASH 120LQFP
S6E2C38L0AGL2000A
S6E2C38L0AGL2000A
Infineon Technologies
IC MCU 32BIT 1MB FLASH 216LQFP
MB90F347ASPFR-GS-ER
MB90F347ASPFR-GS-ER
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY62148GN30-45ZSXI
CY62148GN30-45ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 32TSOP II
S25FL129P0XBHI210
S25FL129P0XBHI210
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA