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| Part Number | IDM10G120C5XTMA1 | IDK10G120C5XTMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 1200 V |
| Current - Average Rectified (Io) | 38A (DC) | 31.9A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | 1.8 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | - |
| Current - Reverse Leakage @ Vr | 62 µA @ 12 V | 18 µA @ 1200 V |
| Capacitance @ Vr, F | 29pF @ 800V, 1MHz | 525pF @ 1V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO252-2 | PG-TO263-2-1 |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 175°C |
