IDL12G65C5XUMA1
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Infineon Technologies IDL12G65C5XUMA1

Manufacturer No:
IDL12G65C5XUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDL12G65C5XUMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 12A VSON-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:190 µA @ 650 V
Capacitance @ Vr, F:360pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-PowerTSFN
Supplier Device Package:PG-VSON-4
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number IDL12G65C5XUMA1 IDL12G65C5XUMA2   IDL02G65C5XUMA1   IDL10G65C5XUMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 12A (DC) 12A (DC) 2A (DC) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A 1.7 V @ 12 A 1.7 V @ 2 A 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 190 µA @ 650 V 190 µA @ 650 V 35 µA @ 650 V 180 µA @ 650 V
Capacitance @ Vr, F 360pF @ 1V, 1MHz 360pF @ 1V, 1MHz 70pF @ 1V, 1MHz 300pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 4-PowerTSFN 4-PowerTSFN 4-PowerTSFN 4-PowerTSFN
Supplier Device Package PG-VSON-4 PG-VSON-4 PG-VSON-4 PG-VSON-4
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 175°C -55°C ~ 150°C

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