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| Part Number | IDL02G65C5XUMA1 | IDL02G65C5XUMA2 | IDL04G65C5XUMA1 | IDL06G65C5XUMA1 | IDL08G65C5XUMA1 | IDL12G65C5XUMA1 |
|---|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Discontinued at Digi-Key | Discontinued at Digi-Key | Discontinued at Digi-Key | Discontinued at Digi-Key |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 2A (DC) | 2A (DC) | 4A (DC) | 6A (DC) | 8A (DC) | 12A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A | 1.7 V @ 2 A | 1.7 V @ 4 A | 1.7 V @ 6 A | 1.7 V @ 8 A | 1.7 V @ 12 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 35 µA @ 650 V | 35 µA @ 650 V | 70 µA @ 650 V | 110 µA @ 650 V | 140 µA @ 650 V | 190 µA @ 650 V |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz | 70pF @ 1V, 1MHz | 130pF @ 1V, 1MHz | 190pF @ 1V, 1MHz | 250pF @ 1V, 1MHz | 360pF @ 1V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN |
| Supplier Device Package | PG-VSON-4 | PG-VSON-4 | PG-VSON-4 | PG-VSON-4 | PG-VSON-4 | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
