IDK20G120C5XTMA1
  • Share:

Infineon Technologies IDK20G120C5XTMA1

Manufacturer No:
IDK20G120C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK20G120C5XTMA1 Datasheet
ECAD Model:
-
Description:
SIC DISCRETE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):56A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:123 µA @ 1200 V
Capacitance @ Vr, F:1050pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2-1
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$11.32
64

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK20G120C5XTMA1 IDK10G120C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 56A (DC) 31.9A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 123 µA @ 1200 V 18 µA @ 1200 V
Capacitance @ Vr, F 1050pF @ 1V, 1MHz 525pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2-1 PG-TO263-2-1
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SB150-E3/73
SB150-E3/73
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 1A DO204AL
2CL75
2CL75
Diotec Semiconductor
HV DIODE D2.5X12 16000V 0.005A
BAS70T-7-F
BAS70T-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 70MA SOT523
EGL34G-E3/83
EGL34G-E3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 500MA DO213
PG151R_R2_00001
PG151R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
BAS70T-TP
BAS70T-TP
Micro Commercial Co
DIODE SCHOTTKY 70V 70MA SOT523
1N4151W-HE3-08
1N4151W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA SOD123
JANTXV1N5819UR-1/TR
JANTXV1N5819UR-1/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
SS2P4HE3/84A
SS2P4HE3/84A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 2A DO220AA
ES1FL M2G
ES1FL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
SFAF502GHC0G
SFAF502GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A ITO220AC
2A07-TP
2A07-TP
Micro Commercial Co
DIODE GEN PURP 1KV 2A DO15

Related Product By Brand

DD260N16KKHPSA1
DD260N16KKHPSA1
Infineon Technologies
DIODE ARRAY MOD 1700V 410A
BCM856SH6433XTMA1
BCM856SH6433XTMA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SOT363
BSO4804
BSO4804
Infineon Technologies
MOSFET 2N-CH 30V 8A 8SOIC
BTS130-E3045A
BTS130-E3045A
Infineon Technologies
N-CHANNEL POWER MOSFET
IRL1004
IRL1004
Infineon Technologies
MOSFET N-CH 40V 130A TO220AB
IRF7426TR
IRF7426TR
Infineon Technologies
MOSFET N-CH 20V 8SO
IRF6614
IRF6614
Infineon Technologies
MOSFET N-CH 40V 12.7A DIRECTFET
IKY50N120CH3XKSA1
IKY50N120CH3XKSA1
Infineon Technologies
IGBT 1200V 100A TO247-4
MB88152APNF-G-100-JNEFE1
MB88152APNF-G-100-JNEFE1
Infineon Technologies
IC CLOCK GENERATOR EMI 8SOIC
CY7C68013A-56LFXI
CY7C68013A-56LFXI
Infineon Technologies
IC MCU USB PERIPH HI SPD 56VQFN
MB90598GPFR-G-141-BND
MB90598GPFR-G-141-BND
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
S25FL064LABBHI020
S25FL064LABBHI020
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 24BGA