IDK10G65C5XTMA1
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Infineon Technologies IDK10G65C5XTMA1

Manufacturer No:
IDK10G65C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK10G65C5XTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 10A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:1.7 mA @ 650 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
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$2.68
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Similar Products

Part Number IDK10G65C5XTMA1 IDK10G65C5XTMA2   IDK12G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 10A (DC) 10A (DC) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 10 A 1.8 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 1.7 mA @ 650 V - 2.1 mA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 300pF @ 1V, 1MHz 360pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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