IDK09G65C5XTMA2
  • Share:

Infineon Technologies IDK09G65C5XTMA2

Manufacturer No:
IDK09G65C5XTMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK09G65C5XTMA2 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 9A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 9 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:1.6 mA @ 650 V
Capacitance @ Vr, F:270pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.17
72

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK09G65C5XTMA2 IDK02G65C5XTMA2   IDK03G65C5XTMA2   IDK04G65C5XTMA2   IDK05G65C5XTMA2   IDK06G65C5XTMA2   IDK08G65C5XTMA2   IDK09G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 9A (DC) 2A (DC) 3A (DC) 4A (DC) 5A (DC) 6A (DC) 8A (DC) 9A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 9 A 1.8 V @ 2 A 1.8 V @ 3 A 1.8 V @ 4 A 1.8 V @ 5 A 1.8 V @ 6 A 1.8 V @ 8 A 1.8 V @ 9 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 1.6 mA @ 650 V 330 µA @ 650 V 500 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V 1.1 mA @ 650 V - 1.6 mA @ 650 V
Capacitance @ Vr, F 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 100pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 190pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

WNSC06650T6J
WNSC06650T6J
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
S2BA R3G
S2BA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO214AC
CDBUR0330
CDBUR0330
Comchip Technology
DIODE SCHOTTKY 30V 350MA 0603
VS-50WQ04FNTRL-M3
VS-50WQ04FNTRL-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
VS-ETU1506-1HM3
VS-ETU1506-1HM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO263
JANTX1N4248/TR
JANTX1N4248/TR
Microchip Technology
RECTIFIER UFR,FRR
16F40
16F40
Solid State Inc.
16 AMP SILCON RECTIFIER DO4 KK
HFA06TB120
HFA06TB120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A TO220AC
VS-40EPF02PBF
VS-40EPF02PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 40A TO247AC
CD214A-B130LF
CD214A-B130LF
Bourns Inc.
DIODE SCHOTTKY 30V 1A SMA
BY229X-600,127
BY229X-600,127
NXP USA Inc.
DIODE GEN PURP 500V 8A TO220F
MER2DAH_R1_00701
MER2DAH_R1_00701
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI

Related Product By Brand

IPG20N04S4L11AATMA1
IPG20N04S4L11AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRFS23N15D
IRFS23N15D
Infineon Technologies
MOSFET N-CH 150V 23A D2PAK
AUIRFS6535
AUIRFS6535
Infineon Technologies
MOSFET N-CH 300V 19A D2PAK
TLE9831QVXUMA2
TLE9831QVXUMA2
Infineon Technologies
IC MOTOR DRIVER 48VQFN
IRU1030-33CD
IRU1030-33CD
Infineon Technologies
IC REG LINEAR 3.3V 3A DPAK
MB90594GHPFR-G-166
MB90594GHPFR-G-166
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
CY90F428GCPMC-GE1
CY90F428GCPMC-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
S71KL256SC0BHB000
S71KL256SC0BHB000
Infineon Technologies
IC FLASH RAM 256MBIT PAR 24FBGA
CY7C1021BN-15ZXIT
CY7C1021BN-15ZXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
CY7C14121KV18-300BZXC
CY7C14121KV18-300BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
S25FL116K0XBHV033
S25FL116K0XBHV033
Infineon Technologies
IC FLASH 16MBIT SPI/QUAD 24BGA
CY62256NLL-70SNXCT
CY62256NLL-70SNXCT
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOIC