IDK08G65C5XTMA1
  • Share:

Infineon Technologies IDK08G65C5XTMA1

Manufacturer No:
IDK08G65C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK08G65C5XTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 8A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:1.4 mA @ 650 V
Capacitance @ Vr, F:250pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
222

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK08G65C5XTMA1 IDK08G65C5XTMA2   IDK09G65C5XTMA1   IDK02G65C5XTMA1   IDK03G65C5XTMA1   IDK04G65C5XTMA1   IDK05G65C5XTMA1   IDK06G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A (DC) 8A (DC) 9A (DC) 2A (DC) 3A (DC) 4A (DC) 5A (DC) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 8 A 1.8 V @ 8 A 1.8 V @ 9 A 1.8 V @ 2 A 1.8 V @ 3 A 1.8 V @ 4 A 1.8 V @ 5 A 1.8 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 1.4 mA @ 650 V - 1.6 mA @ 650 V 330 µA @ 650 V 500 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V 1.1 mA @ 650 V
Capacitance @ Vr, F 250pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 100pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 190pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

B340AE-13
B340AE-13
Diodes Incorporated
DIODE SCHOTTKY 40V 3A SMA
PMEG3020EPAS115
PMEG3020EPAS115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BYWB29-200-E3/81
BYWB29-200-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
SE10PG-M3/84A
SE10PG-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
GIB1402HE3_A/P
GIB1402HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
VS-86HF40
VS-86HF40
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 85A DO203AB
1N5817RL
1N5817RL
onsemi
DIODE SCHOTTKY 20V 1A AXIAL
FES16GT
FES16GT
onsemi
DIODE GEN PURP 400V 16A TO220AC
1N5617GP-E3/73
1N5617GP-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AC
VS-STPS1045BTRRPBF
VS-STPS1045BTRRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 10A DPAK
1N4148 BK
1N4148 BK
Central Semiconductor Corp
DIODE GP 100V 150MA DO35
RFUH25NS3STL
RFUH25NS3STL
Rohm Semiconductor
FAST RECOVERY DIODES. ROHM'S FAS

Related Product By Brand

BAR6406WH6327XTSA1
BAR6406WH6327XTSA1
Infineon Technologies
RF DIODE PIN 150V 250MW SOT323-3
IMBG120R045M1HXTMA1
IMBG120R045M1HXTMA1
Infineon Technologies
SICFET N-CH 1.2KV 47A TO263
SPP100N06S2-05
SPP100N06S2-05
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
IRF6645
IRF6645
Infineon Technologies
MOSFET N-CH 100V 5.7A DIRECTFET
TLS115B0EJXUMA1
TLS115B0EJXUMA1
Infineon Technologies
IC REG LINEAR POS ADJ 150MA DSO8
CY7B9945V-2AXIT
CY7B9945V-2AXIT
Infineon Technologies
IC CLK BUFF 11OUT 200MHZ 52LQFP
CY9BF322LQN-G-AVE2
CY9BF322LQN-G-AVE2
Infineon Technologies
IC MCU 32BIT 160KB FLASH 64QFN
CY8C3445PVI-094
CY8C3445PVI-094
Infineon Technologies
IC MCU 8BIT 32KB FLASH 48SSOP
MB9BF128SAPMC-GE1
MB9BF128SAPMC-GE1
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 144LQFP
S29GL512T10TFI010
S29GL512T10TFI010
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
CY62128ELL-55SXET
CY62128ELL-55SXET
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOIC
S29GL064S80DHIV20
S29GL064S80DHIV20
Infineon Technologies
IC FLASH 64MBIT PARALLEL 64FBGA