IDK06G65C5XTMA1
  • Share:

Infineon Technologies IDK06G65C5XTMA1

Manufacturer No:
IDK06G65C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK06G65C5XTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 6A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:1.1 mA @ 650 V
Capacitance @ Vr, F:190pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK06G65C5XTMA1 IDK06G65C5XTMA2   IDK08G65C5XTMA1   IDK09G65C5XTMA1   IDK02G65C5XTMA1   IDK03G65C5XTMA1   IDK04G65C5XTMA1   IDK05G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 6A (DC) 6A (DC) 8A (DC) 9A (DC) 2A (DC) 3A (DC) 4A (DC) 5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 6 A 1.8 V @ 6 A 1.8 V @ 8 A 1.8 V @ 9 A 1.8 V @ 2 A 1.8 V @ 3 A 1.8 V @ 4 A 1.8 V @ 5 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 1.1 mA @ 650 V 1.1 mA @ 650 V 1.4 mA @ 650 V 1.6 mA @ 650 V 330 µA @ 650 V 500 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V
Capacitance @ Vr, F 190pF @ 1V, 1MHz 190pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 100pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAV19WS
BAV19WS
SMC Diode Solutions
DIODE GEN PURP 100V 200MA SOD323
1N4004G-T
1N4004G-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
SK1080D1
SK1080D1
Diotec Semiconductor
SCHOTTKY DPAK 80V 10A
APT75DQ60BG
APT75DQ60BG
Microchip Technology
DIODE GEN PURP 600V 75A TO247
UF5400
UF5400
NTE Electronics, Inc
R-50V 3A ULTRA FAST
CURB206-G
CURB206-G
Comchip Technology
DIODE GEN PURP 800V 2A DO214AA
FESB8BTHE3_A/P
FESB8BTHE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB
GL34G-CT
GL34G-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
S1PAHE3/84A
S1PAHE3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO220AA
DB3X207K0L
DB3X207K0L
Panasonic Electronic Components
DIODE GEN PURP 20V 1A MINI3
SK33BHR5G
SK33BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AA
D255N06BXPSA1
D255N06BXPSA1
Infineon Technologies
DIODE GEN PURP 600V 255A

Related Product By Brand

IPT60R125CFD7XTMA1
IPT60R125CFD7XTMA1
Infineon Technologies
MOSFET N-CH 600V 21A 8HSOF
IPG20N06S2L-35AATMA1
IPG20N06S2L-35AATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
SPA11N60C3XKSA1
SPA11N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO220-3
IRF3710ZGPBF
IRF3710ZGPBF
Infineon Technologies
MOSFET N-CH 100V 59A TO220AB
IRG4BH20K-L
IRG4BH20K-L
Infineon Technologies
IGBT 1200V 11A 60W TO262
IHW15T120FKSA1
IHW15T120FKSA1
Infineon Technologies
IGBT 1200V 30A 113W TO247-3
XC888CM8FFA5VACKXUMA1
XC888CM8FFA5VACKXUMA1
Infineon Technologies
IC MCU 8BIT 32KB FLASH 64TQFP
CY8C21334W-12PVXET
CY8C21334W-12PVXET
Infineon Technologies
IC MCU 8BIT 8KB FLASH 20SSOP
S29GL512S10TFI020
S29GL512S10TFI020
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP
CY7C1512V18-250BZXC
CY7C1512V18-250BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1370D-167AXCB
CY7C1370D-167AXCB
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
S25FL132K0XBHV023
S25FL132K0XBHV023
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 24BGA