IDK06G65C5XTMA1
  • Share:

Infineon Technologies IDK06G65C5XTMA1

Manufacturer No:
IDK06G65C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK06G65C5XTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 6A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:1.1 mA @ 650 V
Capacitance @ Vr, F:190pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK06G65C5XTMA1 IDK06G65C5XTMA2   IDK08G65C5XTMA1   IDK09G65C5XTMA1   IDK02G65C5XTMA1   IDK03G65C5XTMA1   IDK04G65C5XTMA1   IDK05G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 6A (DC) 6A (DC) 8A (DC) 9A (DC) 2A (DC) 3A (DC) 4A (DC) 5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 6 A 1.8 V @ 6 A 1.8 V @ 8 A 1.8 V @ 9 A 1.8 V @ 2 A 1.8 V @ 3 A 1.8 V @ 4 A 1.8 V @ 5 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 1.1 mA @ 650 V 1.1 mA @ 650 V 1.4 mA @ 650 V 1.6 mA @ 650 V 330 µA @ 650 V 500 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V
Capacitance @ Vr, F 190pF @ 1V, 1MHz 190pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 100pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

APT10SCD120K
APT10SCD120K
Microsemi Corporation
DIODE SCHOTTKY 1.2KV 10A TO220
MBR190_R2_00001
MBR190_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
RGL41BHE3/97
RGL41BHE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO213AB
UF4003-E3/53
UF4003-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
D950N22TXPSA1
D950N22TXPSA1
Infineon Technologies
DIODE GEN PURP 2.2KV 950A
1N4004_NL
1N4004_NL
onsemi
DIODE GEN PURP 400V 1A DO41
EGP20FHE3/73
EGP20FHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 2A DO204AC
SS5P5HM3/86A
SS5P5HM3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 5A TO277A
S1DL MQG
S1DL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
SS33HR7G
SS33HR7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AB
NRVBS2040LT3G
NRVBS2040LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
FS1KE-TP
FS1KE-TP
Micro Commercial Co
DIODE GEN PURP 1A DO214AC

Related Product By Brand

BAT 54-06 B5003
BAT 54-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BCR135SH6827XTSA1
BCR135SH6827XTSA1
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
IRFB4310PBF
IRFB4310PBF
Infineon Technologies
MOSFET N-CH 100V 130A TO220AB
DDB6U134N16RRB11BPSA1
DDB6U134N16RRB11BPSA1
Infineon Technologies
IGBT MODULE
XMC4200F64K256BAXQSA1
XMC4200F64K256BAXQSA1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 64LQFP
SAX-XC878-16FFA 5V AA
SAX-XC878-16FFA 5V AA
Infineon Technologies
IC MCU 8BIT 64KB FLASH 64LQFP
XMC1201T038F0200AAXUMA1
XMC1201T038F0200AAXUMA1
Infineon Technologies
IC MCU 32BIT 200KB FLASH 38TSSOP
IR3519MTRPBF
IR3519MTRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8MLP
CY96F613RBPMC-GS-UJE1
CY96F613RBPMC-GS-UJE1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
MB90349CASPFV-GS-696E1
MB90349CASPFV-GS-696E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100LQFP
S25FL129P0XMFI013
S25FL129P0XMFI013
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY62256NLL-55ZXIT
CY62256NLL-55ZXIT
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I