IDK04G65C5XTMA1
  • Share:

Infineon Technologies IDK04G65C5XTMA1

Manufacturer No:
IDK04G65C5XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK04G65C5XTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 4A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:670 µA @ 650 V
Capacitance @ Vr, F:130pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
311

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDK04G65C5XTMA1 IDK04G65C5XTMA2   IDK05G65C5XTMA1   IDK06G65C5XTMA1   IDK08G65C5XTMA1   IDK09G65C5XTMA1   IDK02G65C5XTMA1   IDK03G65C5XTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 4A (DC) 4A (DC) 5A (DC) 6A (DC) 8A (DC) 9A (DC) 2A (DC) 3A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 4 A 1.8 V @ 4 A 1.8 V @ 5 A 1.8 V @ 6 A 1.8 V @ 8 A 1.8 V @ 9 A 1.8 V @ 2 A 1.8 V @ 3 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 670 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V 1.1 mA @ 650 V 1.4 mA @ 650 V 1.6 mA @ 650 V 330 µA @ 650 V 500 µA @ 650 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 190pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 100pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SR506 A0G
SR506 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO201AD
FFSP08120A
FFSP08120A
onsemi
DIODE SCHOTTKY 1.2KV 8A TO220-2
B360A-M3/61T
B360A-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A DO214AC
S5MLHE3-TP
S5MLHE3-TP
Micro Commercial Co
5A SILICON RECTIFIER,SMC
SL13-M3/61T
SL13-M3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 1.5A DO214AC
GL41AHE3/97
GL41AHE3/97
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO213AB
VS-10TQ035STRRHM3
VS-10TQ035STRRHM3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A D2PAK
DSS16-01AS-TUB
DSS16-01AS-TUB
IXYS
DIODE SCHOTTKY 100V 16A TO263AB
VS-20ETF08PBF
VS-20ETF08PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220FP
MS108/TR12
MS108/TR12
Microsemi Corporation
DIODE SCHOTTKY 80V 1A DO204AL
GP2D006A065C
GP2D006A065C
SemiQ
DIODE SCHOTTKY 650V 6A TO252-2
VS-10ETS08STRLPBF
VS-10ETS08STRLPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A TO263AB

Related Product By Brand

IRAUDPS3
IRAUDPS3
Infineon Technologies
BOARD EVAL 30V POWER SUPPLY
KITXMC48RELAXECATV1TOBO1
KITXMC48RELAXECATV1TOBO1
Infineon Technologies
RELAX ETHERCAT KIT XMC4800 EVAL
IPS65R950C6
IPS65R950C6
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BCR129FE6327
BCR129FE6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
SPW11N60C3
SPW11N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
XMC1301T016F0008ABXUMA1
XMC1301T016F0008ABXUMA1
Infineon Technologies
IC MCU 32BIT 8KB FLASH 16TSSOP
XE164FM72F80LAAFXUMA1
XE164FM72F80LAAFXUMA1
Infineon Technologies
IC MCU 16BIT 576KB FLASH 100LQFP
TLE92613QXXUMA2
TLE92613QXXUMA2
Infineon Technologies
IC INTERFACE SPECIALIZED 48VQFN
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA
CY8C4125LQI-483T
CY8C4125LQI-483T
Infineon Technologies
IC MCU 32BIT 32KB FLASH 40QFN
MB91248ZPFV-GS-188E1
MB91248ZPFV-GS-188E1
Infineon Technologies
IC MCU 32BIT 256KB MROM 144LQFP
S29GL512T10TFI043
S29GL512T10TFI043
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP