IDK02G65C5XTMA2
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Infineon Technologies IDK02G65C5XTMA2

Manufacturer No:
IDK02G65C5XTMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDK02G65C5XTMA2 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 2A TO263-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):2A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 2 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:330 µA @ 650 V
Capacitance @ Vr, F:70pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-2
Operating Temperature - Junction:-55°C ~ 175°C
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$0.96
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Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 2A (DC) 6A (DC) 3A (DC) 4A (DC) 5A (DC) 8A (DC) 9A (DC) 12A (DC) 2A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 2 A 1.8 V @ 6 A 1.8 V @ 3 A 1.8 V @ 4 A 1.8 V @ 5 A 1.8 V @ 8 A 1.8 V @ 9 A 1.8 V @ 12 A 1.8 V @ 2 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 330 µA @ 650 V 1.1 mA @ 650 V 500 µA @ 650 V 670 µA @ 650 V 830 µA @ 650 V - 1.6 mA @ 650 V - 330 µA @ 650 V
Capacitance @ Vr, F 70pF @ 1V, 1MHz 190pF @ 1V, 1MHz 100pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 360pF @ 1V, 1MHz 70pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2 PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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