IDH20G65C6XKSA1
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Infineon Technologies IDH20G65C6XKSA1

Manufacturer No:
IDH20G65C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH20G65C6XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 41A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):41A (DC)
Voltage - Forward (Vf) (Max) @ If:1.35 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:67 µA @ 420 V
Capacitance @ Vr, F:970pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2
Operating Temperature - Junction:-55°C ~ 175°C
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In Stock

$8.87
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Similar Products

Part Number IDH20G65C6XKSA1 IDH10G65C6XKSA1   IDH20G65C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V
Current - Average Rectified (Io) 41A (DC) 24A (DC) 20A (DC)
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 20 A 1.35 V @ 10 A 1.7 V @ 20 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 67 µA @ 420 V 33 µA @ 420 V 700 µA @ 650 V
Capacitance @ Vr, F 970pF @ 1V, 1MHz 495pF @ 1V, 1MHz 590pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2 PG-TO220-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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