IDH16G120C5XKSA1
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Infineon Technologies IDH16G120C5XKSA1

Manufacturer No:
IDH16G120C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDH16G120C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOT 1200V 16A TO220-2-1
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):16A (DC)
Voltage - Forward (Vf) (Max) @ If:1.95 V @ 16 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 1200 V
Capacitance @ Vr, F:730pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-1
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDH16G120C5XKSA1 IDH10G120C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 16A (DC) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.95 V @ 16 A 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V 62 µA @ 1200 V
Capacitance @ Vr, F 730pF @ 1V, 1MHz 525pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-1 PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C

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