IDH12SG60CXKSA1
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Infineon Technologies IDH12SG60CXKSA1

Manufacturer No:
IDH12SG60CXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH12SG60CXKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 12A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):12A (DC)
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:310pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDH12SG60CXKSA1 IDH12SG60CXKSA2   IDH10SG60CXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 12A (DC) 12A (DC) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 12 A 2.1 V @ 12 A 2.1 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 600 V 100 µA @ 600 V 90 µA @ 600 V
Capacitance @ Vr, F 310pF @ 1V, 1MHz 310pF @ 1V, 1MHz 290pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-1 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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