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| Part Number | IDH12G65C5XKSA1 | IDH12G65C6XKSA1 | IDH12G65C5XKSA2 | IDH16G65C5XKSA1 | IDH02G65C5XKSA1 | IDH10G65C5XKSA1 |
|---|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Active | Discontinued at Digi-Key | Discontinued at Digi-Key | Discontinued at Digi-Key |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) | 12A (DC) | 27A (DC) | 12A (DC) | 16A (DC) | 2A (DC) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A | 1.35 V @ 12 A | 1.7 V @ 12 A | 1.7 V @ 16 A | 1.7 V @ 2 A | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 190 µA @ 650 V | 40 µA @ 420 V | 190 µA @ 650 V | 550 µA @ 650 V | 35 µA @ 650 V | 340 µA @ 650 V |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz | 594pF @ 1V, 1MHz | 360pF @ 1V, 1MHz | 470pF @ 1V, 1MHz | 70pF @ 1V, 1MHz | 300pF @ 1V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Supplier Device Package | PG-TO220-2 | PG-TO220-2 | PG-TO220-2-1 | PG-TO220-2-2 | PG-TO220-2-1 | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
