IDH10SG60CXKSA1
  • Share:

Infineon Technologies IDH10SG60CXKSA1

Manufacturer No:
IDH10SG60CXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH10SG60CXKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 10A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:90 µA @ 600 V
Capacitance @ Vr, F:290pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
157

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDH10SG60CXKSA1 IDH10SG60CXKSA2   IDH12SG60CXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 10A (DC) 10A (DC) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 10 A 2.1 V @ 10 A 2.1 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 600 V 90 µA @ 600 V 100 µA @ 600 V
Capacitance @ Vr, F 290pF @ 1V, 1MHz 290pF @ 1V, 1MHz 310pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-1 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

AL1K
AL1K
Diotec Semiconductor
DIODE STD DO-213AA 800V 1A
HS3G V7G
HS3G V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
PMEG3030BEP,115
PMEG3030BEP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 3A SOD128
WNSC2D12650TJ
WNSC2D12650TJ
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE I
CDBA1200-HF
CDBA1200-HF
Comchip Technology
DIODE SCHOTTKY 150V 1A DO214AC
VS-12FL10S02
VS-12FL10S02
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 12A DO203AA
JANTXV1N5623US
JANTXV1N5623US
Microchip Technology
DIODE GEN PURP 1KV 1A D5A
HFA06TB120
HFA06TB120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A TO220AC
FGP20CHE3/73
FGP20CHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO204AC
FR302G B0G
FR302G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
HER307-AP
HER307-AP
Micro Commercial Co
DIODE GPP HE 3A DO-201AD
ZLLS500TA-79
ZLLS500TA-79
Diodes Incorporated
DIODE SCHOTTKY 40V 700MA SOT23-3

Related Product By Brand

AUIRF2903ZSTRL
AUIRF2903ZSTRL
Infineon Technologies
MOSFET N-CH 30V 160A D2PAK
IRFS31N20DTRR
IRFS31N20DTRR
Infineon Technologies
MOSFET N-CH 200V 31A D2PAK
FF300R12KE4EHOSA1
FF300R12KE4EHOSA1
Infineon Technologies
IGBT MOD 1200V 460A 1600W
IRG4BC30F-SPBF
IRG4BC30F-SPBF
Infineon Technologies
IGBT 600V 31A 100W D2PAK
IR2128SPBF
IR2128SPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 8SOIC
IPS0151
IPS0151
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220AB
MB90497GPMC-GS-238
MB90497GPMC-GS-238
Infineon Technologies
IC MCU 16BIT 64KB MROM 64LQFP
MB90351ASPMCR-GS-128E1
MB90351ASPMCR-GS-128E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 64LQFP
MB90F438LSPFR-G-FLE1
MB90F438LSPFR-G-FLE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
MB96F346RWCPMC-GSE2
MB96F346RWCPMC-GSE2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 100LQFP
CY7C199CL-15VXCT
CY7C199CL-15VXCT
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOJ
CY7C1320BV18-250BZI
CY7C1320BV18-250BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA