IDH10S60CAKSA1
  • Share:

Infineon Technologies IDH10S60CAKSA1

Manufacturer No:
IDH10S60CAKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDH10S60CAKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 10A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:140 µA @ 600 V
Capacitance @ Vr, F:480pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.60
259

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDH10S60CAKSA1 IDH16S60CAKSA1   IDH12S60CAKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 10A (DC) 16A (DC) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A 1.7 V @ 16 A 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 140 µA @ 600 V 200 µA @ 600 V 160 µA @ 600 V
Capacitance @ Vr, F 480pF @ 1V, 1MHz 650pF @ 1V, 1MHz 530pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

TBAS16,LM
TBAS16,LM
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 215MA SOT23-3
RGL34D-E3/98
RGL34D-E3/98
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 500MA DO213
V8P12-M3/86A
V8P12-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 8A 120V TO-277A
PG151R_R2_00001
PG151R_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION FAST S
HSM590JE3/TR13
HSM590JE3/TR13
Microchip Technology
DIODE SCHOTTKY 90V 5A DO214AB
VS-25ETS08STRL-M3
VS-25ETS08STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 25A TO263AB
245NQ015-1
245NQ015-1
SMC Diode Solutions
DIODE SCHOTTKY 15V 240A PRM1-1
1N3974R
1N3974R
Solid State Inc.
DO8 100 AMP SILICON RECTIFIER
VS-8TQ100SPBF
VS-8TQ100SPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 8A D2PAK
VS-8EWS16STRPBF
VS-8EWS16STRPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 8A D-PAK
MUR305SHM6G
MUR305SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
HER203-TP
HER203-TP
Micro Commercial Co
DIODE GPP HE 2A DO-15

Related Product By Brand

EVALLED-ICL8002G-B1
EVALLED-ICL8002G-B1
Infineon Technologies
BOARD EVAL ICL8002 DIM 13W LED
AUIRF7319QTR
AUIRF7319QTR
Infineon Technologies
MOSFET N/P-CH 30V 8SOIC
PSB 21473 F V1.3
PSB 21473 F V1.3
Infineon Technologies
IC TELECOM INTERFACE TQFP-144
IR3820MTRPBF
IR3820MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 12A PQFN
CY22801KFXCT
CY22801KFXCT
Infineon Technologies
IC CLOCK GEN PROGR UNIV 8SOIC
CY2308ESXC-2
CY2308ESXC-2
Infineon Technologies
IC CLK ZDB 8OUT 133MHZ 16SOIC
CY25100SXC-048T
CY25100SXC-048T
Infineon Technologies
IC CLOCK GENERATOR
CY24293ZXAT
CY24293ZXAT
Infineon Technologies
APPLICATION SPECIFIC CLOCKS
CY8C21234-24SXI
CY8C21234-24SXI
Infineon Technologies
IC MCU 8BIT 8KB FLASH 16SOIC
CY9AF144LBPMC-G-JNE2
CY9AF144LBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64LQFP
MB91F775RDPMC-GSE1
MB91F775RDPMC-GSE1
Infineon Technologies
IC MCU 32BIT 576KB FLASH 144LQFP
FM25CL64B-GATR
FM25CL64B-GATR
Infineon Technologies
IC FRAM 64KBIT SPI 16MHZ 8SOIC