IDH10G120C5XKSA1
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Infineon Technologies IDH10G120C5XKSA1

Manufacturer No:
IDH10G120C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDH10G120C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOT 1200V 10A TO220-2-1
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):10A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:62 µA @ 1200 V
Capacitance @ Vr, F:525pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-1
Operating Temperature - Junction:-55°C ~ 175°C
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$6.78
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Similar Products

Part Number IDH10G120C5XKSA1 IDH20G120C5XKSA1   IDH16G120C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 10A (DC) 56A (DC) 16A (DC)
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 20 A 1.95 V @ 16 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 62 µA @ 1200 V 123 µA @ 1200 V 50 µA @ 1200 V
Capacitance @ Vr, F 525pF @ 1V, 1MHz 1050pF @ 1V, 1MHz 730pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-1 PG-TO220-2-1 PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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