IDH09G65C5XKSA1
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Infineon Technologies IDH09G65C5XKSA1

Manufacturer No:
IDH09G65C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH09G65C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 9A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):9A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 9 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:310 µA @ 650 V
Capacitance @ Vr, F:270pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDH09G65C5XKSA1 IDH09G65C5XKSA2   IDH02G65C5XKSA1   IDH04G65C5XKSA1   IDH05G65C5XKSA1   IDH06G65C5XKSA1   IDH08G65C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 9A (DC) 9A (DC) 2A (DC) 4A (DC) 5A (DC) 6A (DC) 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 9 A 1.7 V @ 9 A 1.7 V @ 2 A 1.7 V @ 4 A 1.7 V @ 5 A 1.7 V @ 6 A 1.7 V @ 8 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 310 µA @ 650 V 160 µA @ 650 V 35 µA @ 650 V 140 µA @ 650 V 170 µA @ 650 V 210 µA @ 650 V 280 µA @ 650 V
Capacitance @ Vr, F 270pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 190pF @ 1V, 1MHz 250pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-1 PG-TO220-2-1 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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