IDH08SG60CXKSA1
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Infineon Technologies IDH08SG60CXKSA1

Manufacturer No:
IDH08SG60CXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH08SG60CXKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:70 µA @ 600 V
Capacitance @ Vr, F:240pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDH08SG60CXKSA1 IDH08SG60CXKSA2   IDH09SG60CXKSA1   IDH03SG60CXKSA1   IDH04SG60CXKSA1   IDH05SG60CXKSA1   IDH06SG60CXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8A (DC) 8A (DC) 9A (DC) 3A (DC) 4A (DC) 5A (DC) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 8 A 2.1 V @ 8 A 2.1 V @ 9 A 2.3 V @ 3 A 2.3 V @ 4 A 2.3 V @ 5 A 2.3 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 70 µA @ 600 V 70 µA @ 600 V 80 µA @ 600 V 15 µA @ 600 V 25 µA @ 600 V 30 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F 240pF @ 1V, 1MHz 240pF @ 1V, 1MHz 280pF @ 1V, 1MHz 60pF @ 1V, 1MHz 80pF @ 1V, 1MHz 110pF @ 1V, 1MHz 130pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2-1 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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