IDH08G65C5XKSA1
  • Share:

Infineon Technologies IDH08G65C5XKSA1

Manufacturer No:
IDH08G65C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDH08G65C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 8A TO220-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:280 µA @ 650 V
Capacitance @ Vr, F:250pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
427

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDH08G65C5XKSA1 IDH08G65C6XKSA1   IDH08G65C5XKSA2   IDH09G65C5XKSA1   IDH02G65C5XKSA1   IDH04G65C5XKSA1   IDH05G65C5XKSA1   IDH06G65C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 8A (DC) 20A (DC) 8A (DC) 9A (DC) 2A (DC) 4A (DC) 5A (DC) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A 1.35 V @ 8 A 1.7 V @ 8 A 1.7 V @ 9 A 1.7 V @ 2 A 1.7 V @ 4 A 1.7 V @ 5 A 1.7 V @ 6 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 280 µA @ 650 V 27 µA @ 420 V 140 µA @ 650 V 310 µA @ 650 V 35 µA @ 650 V 140 µA @ 650 V 170 µA @ 650 V 210 µA @ 650 V
Capacitance @ Vr, F 250pF @ 1V, 1MHz 401pF @ 1V, 1MHz 250pF @ 1V, 1MHz 270pF @ 1V, 1MHz 70pF @ 1V, 1MHz 130pF @ 1V, 1MHz 160pF @ 1V, 1MHz 190pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-2 PG-TO220-2 PG-TO220-2-1 PG-TO220-2-2 PG-TO220-2-1 PG-TO220-2-2 PG-TO220-2-2 PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SSB44HE3_A/H
SSB44HE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 4A DO214AA
SK310-TP
SK310-TP
Micro Commercial Co
DIODE SCHOTTKY 3A 100V SMC
DS135AE
DS135AE
Sanyo
SILICON DIODE POWER RECTIFIER
UG1A-M3/73
UG1A-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
RS2J-M3/5BT
RS2J-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
UG2D
UG2D
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
JAN1N4148UR-1/TR
JAN1N4148UR-1/TR
Microchip Technology
SIGNAL/COMPUTER DIODE
VS-25ETS10STRL-M3
VS-25ETS10STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 25A TO263AB
RS1AB-13
RS1AB-13
Diodes Incorporated
DIODE GEN PURP 50V 1A SMB
GP10B-4002HE3/73
GP10B-4002HE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO204AL
MBR5H150VPA-E1
MBR5H150VPA-E1
Diodes Incorporated
DIODE SCHOTTKY 150V 5A DO27
FR151S-TP
FR151S-TP
Micro Commercial Co
DIODE GPP FAST 1.5A DO-15

Related Product By Brand

DD260N12KHPSA1
DD260N12KHPSA1
Infineon Technologies
DIODE MODULE GP 1200V 260A
IPW60R070C6FKSA1
IPW60R070C6FKSA1
Infineon Technologies
MOSFET N-CH 600V 53A TO247-3
IRLML2244TRPBF
IRLML2244TRPBF
Infineon Technologies
MOSFET P-CH 20V 4.3A SOT23
TLE49631MXTSA1
TLE49631MXTSA1
Infineon Technologies
MAGNETIC SWITCH LATCH SOT23-3
CY8C4014LQI-412T
CY8C4014LQI-412T
Infineon Technologies
IC MCU 32BIT 16KB FLASH 24SQFN
CY89695BPFM-G-196-BNDE1
CY89695BPFM-G-196-BNDE1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90F362TEPMCR-GSE2
MB90F362TEPMCR-GSE2
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB90F952MDSPMC-GSE1
MB90F952MDSPMC-GSE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100LQFP
MB96F336UWAPMC-GK5E2
MB96F336UWAPMC-GK5E2
Infineon Technologies
IC MCU 16BIT 288KB FLASH 144LQFP
MB96F623RBPMC1-GSE2
MB96F623RBPMC1-GSE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
CY7C027V-15AC
CY7C027V-15AC
Infineon Technologies
IC SRAM 512KBIT PARALLEL 100TQFP
CY7C1399B-12VXC
CY7C1399B-12VXC
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOJ