IDH08G120C5XKSA1
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Infineon Technologies IDH08G120C5XKSA1

Manufacturer No:
IDH08G120C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IDH08G120C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOT 1200V 8A TO220-2-1
Delivery:
Payment:
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iso9001
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Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):8A (DC)
Voltage - Forward (Vf) (Max) @ If:1.95 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 1200 V
Capacitance @ Vr, F:365pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-1
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDH08G120C5XKSA1 IDH02G120C5XKSA1   IDH05G120C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 8A (DC) 2A (DC) 5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.95 V @ 8 A 1.65 V @ 2 A 1.8 V @ 5 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 1200 V 18 µA @ 1200 V 33 µA @ 1200 V
Capacitance @ Vr, F 365pF @ 1V, 1MHz 182pF @ 1V, 1MHz 301pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-1 PG-TO220-2-1 PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C 175°C (Max) -55°C ~ 175°C

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