IDH02G120C5XKSA1
  • Share:

Infineon Technologies IDH02G120C5XKSA1

Manufacturer No:
IDH02G120C5XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IDH02G120C5XKSA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOT 1200V 2A TO220-2-1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):2A (DC)
Voltage - Forward (Vf) (Max) @ If:1.65 V @ 2 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:18 µA @ 1200 V
Capacitance @ Vr, F:182pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:PG-TO220-2-1
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$3.07
235

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDH02G120C5XKSA1 IDH05G120C5XKSA1   IDH08G120C5XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 2A (DC) 5A (DC) 8A (DC)
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 2 A 1.8 V @ 5 A 1.95 V @ 8 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 18 µA @ 1200 V 33 µA @ 1200 V 40 µA @ 1200 V
Capacitance @ Vr, F 182pF @ 1V, 1MHz 301pF @ 1V, 1MHz 365pF @ 1V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package PG-TO220-2-1 PG-TO220-2-1 PG-TO220-2-1
Operating Temperature - Junction 175°C (Max) -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

BAS20,235
BAS20,235
Nexperia USA Inc.
DIODE GEN PURP 150V 200MA SOT23
RL 4A
RL 4A
Sanken
DIODE GEN PURP 600V 3A AXIAL
CFRA103-G
CFRA103-G
Comchip Technology
DIODE GEN PURP 200V 1A DO214AC
NSVMBD770DW1T1G
NSVMBD770DW1T1G
onsemi
DIODE SCHOTTKY 70V 100MA SC88
GS3MB-F1-0000HF
GS3MB-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 3A DO214AA
SK32-7
SK32-7
Diodes Incorporated
DIODE SCHOTTKY 20V 3A SMC
MBRS4201T3
MBRS4201T3
onsemi
DIODE SCHOTTKY 200V 4A SMC
SS2P3HE3/85A
SS2P3HE3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A DO220AA
CD214A-B340LLF
CD214A-B340LLF
Bourns Inc.
DIODE SCHOTTKY 40V 3A SMA
1N4947GPHM3/73
1N4947GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
1N4944-AP
1N4944-AP
Micro Commercial Co
DIODE GPP FAST 1A DO-41
DFLF1800-7
DFLF1800-7
Diodes Incorporated
DIODE GP 800V 1A POWERDI123

Related Product By Brand

IDK06G65C5XTMA2
IDK06G65C5XTMA2
Infineon Technologies
DIODE SCHOTTKY 650V 6A TO263-2
IRFR7746PBF-INF
IRFR7746PBF-INF
Infineon Technologies
MOSFET N-CH 75V 56A DPAK
IPF09N03LA G
IPF09N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO252-3
ISO1H816GAUMA1
ISO1H816GAUMA1
Infineon Technologies
IC PWR DRIVER N-CHAN 1:8 DSO-36
IR3838MTR1PBF
IR3838MTR1PBF
Infineon Technologies
IC REG BUCK ADJ 10A 17PQFN
TLE4290G
TLE4290G
Infineon Technologies
IC REG LINEAR FIXED LDO REG
CHL8328-29CRT
CHL8328-29CRT
Infineon Technologies
IC REG CTRLR DDR 2OUT 56VQFN
BGA7H1N6E6327XTSA1
BGA7H1N6E6327XTSA1
Infineon Technologies
IC AMP LTE 2.3-2.69GHZ TSNP6-2
CY90F546GSPQCR-G-FLEFE2
CY90F546GSPQCR-G-FLEFE2
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100PQFP
MB95F118BWPMT-GE1
MB95F118BWPMT-GE1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 48LQFP
S34ML04G104BHV013
S34ML04G104BHV013
Infineon Technologies
IC FLASH 4GBIT PARALLEL 63BGA
CY7C1328S-133AXI
CY7C1328S-133AXI
Infineon Technologies
IC SRAM 4.5MBIT PARALLEL 100TQFP