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| Part Number | IDDD08G65C6XTMA1 | IDDD04G65C6XTMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V |
| Current - Average Rectified (Io) | 24A (DC) | 13A (DC) |
| Voltage - Forward (Vf) (Max) @ If | - | - |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 27 µA @ 420 V | 14 µA @ 420 V |
| Capacitance @ Vr, F | 401pF @ 1V, 1MHz | 205pF @ 1V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 10-PowerSOP Module | 10-PowerSOP Module |
| Supplier Device Package | PG-HDSOP-10-1 | PG-HDSOP-10-1 |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C |
