IDD12SG60CXTMA1
  • Share:

Infineon Technologies IDD12SG60CXTMA1

Manufacturer No:
IDD12SG60CXTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDD12SG60CXTMA1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 12A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):12A (DC)
Voltage - Forward (Vf) (Max) @ If:2.1 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:310pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:PG-TO252-3
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
395

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDD12SG60CXTMA1 IDD12SG60CXTMA2   IDD10SG60CXTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 12A (DC) 12A (DC) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 2.1 V @ 12 A 2.1 V @ 12 A 2.1 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 100 µA @ 600 V 100 µA @ 600 V 90 µA @ 600 V
Capacitance @ Vr, F 310pF @ 1V, 1MHz 310pF @ 1V, 1MHz 290pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1N5822
1N5822
STMicroelectronics
DIODE SCHOTTKY 40V 3A DO201AD
SS28
SS28
onsemi
DIODE SCHOTTKY 80V 2A DO214AA
RL1N1200F
RL1N1200F
Rectron USA
DIODE GEN PURP 1200V 1A A405
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
SD3220S040S3R0
SD3220S040S3R0
KYOCERA AVX
DIODE SCHOTTKY 40V 3A SMC
FFSH3065ADN-F155
FFSH3065ADN-F155
onsemi
650V 30A SIC SBD
1N249R
1N249R
Solid State Inc.
DO5 20 AMP SILICON RECTIFIER
VS-1N3208
VS-1N3208
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 15A DO203AB
1N5819/54
1N5819/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO204AL
FR6J-TP
FR6J-TP
Micro Commercial Co
DIODE GEN PURP 600V 6A DO214AB
VS-20TQ035SPBF
VS-20TQ035SPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A D2PAK
SFA803GHC0G
SFA803GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 8A TO220AC

Related Product By Brand

SHIELDPASCO2SENSORTOBO1
SHIELDPASCO2SENSORTOBO1
Infineon Technologies
XENSIV PAS CO2 SHIELD2GO BOARD
KITLGPWRBOM004TOBO1
KITLGPWRBOM004TOBO1
Infineon Technologies
EVAL POWER BOARD 60V
BC849CE6327HTSA1
BC849CE6327HTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT-23
BSD235NH6327XTSA1
BSD235NH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 20V 0.95A SOT363
FF200R12KT3HOSA1
FF200R12KT3HOSA1
Infineon Technologies
IGBT MODULE 1200V 1050W
TCA505BCHIPX1SA1
TCA505BCHIPX1SA1
Infineon Technologies
IC SWITCH PROXIMITY INDCT CHIP
SK-FM4-176L-S6E2CC-ETH
SK-FM4-176L-S6E2CC-ETH
Infineon Technologies
S6E2CCA EVAL BRD
CY90F548GHDSPQC-G-ERE2
CY90F548GHDSPQC-G-ERE2
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100PQFP
CY62127DV30LL-55ZXI
CY62127DV30LL-55ZXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
S25FL128SAGMFIG10
S25FL128SAGMFIG10
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
S29GL256P11FFIS40
S29GL256P11FFIS40
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
QMP29GL512P10FFCR10
QMP29GL512P10FFCR10
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA