IDD04SG60CXTMA2
  • Share:

Infineon Technologies IDD04SG60CXTMA2

Manufacturer No:
IDD04SG60CXTMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDD04SG60CXTMA2 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 600V 4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A (DC)
Voltage - Forward (Vf) (Max) @ If:2.3 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:25 µA @ 600 V
Capacitance @ Vr, F:80pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:PG-TO252-3
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$3.00
229

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDD04SG60CXTMA2 IDD06SG60CXTMA2   IDD05SG60CXTMA2   IDD08SG60CXTMA2   IDD09SG60CXTMA2   IDD03SG60CXTMA2   IDD04SG60CXTMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Discontinued at Digi-Key
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 4A (DC) 6A (DC) 5A (DC) 8A (DC) 9A (DC) 3A (DC) 5.6A
Voltage - Forward (Vf) (Max) @ If 2.3 V @ 4 A 2.3 V @ 6 A 2.3 V @ 5 A 2.1 V @ 8 A 2.1 V @ 9 A 2.3 V @ 3 A 2.3 V @ 4 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 25 µA @ 600 V 50 µA @ 600 V 30 µA @ 600 V 70 µA @ 600 V 80 µA @ 600 V 15 µA @ 600 V 25 µA @ 600 V
Capacitance @ Vr, F 80pF @ 1V, 1MHz 130pF @ 1V, 1MHz 110pF @ 1V, 1MHz 240pF @ 1V, 1MHz 280pF @ 1V, 1MHz 60pF @ 1V, 1MHz 80pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3 PG-TO252-3-11
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

SS210LWHRVG
SS210LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SOD123W
STTH310
STTH310
STMicroelectronics
DIODE GEN PURP 1KV 3A DO201AD
NTE625
NTE625
NTE Electronics, Inc
R-SI 200V 8A 150NS
LSIC2SD065E16CCA
LSIC2SD065E16CCA
Littelfuse Inc.
DIODE SCHOTTKY SIC 650V 8A DUAL
BAV21W RHG
BAV21W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD123
HER102G
HER102G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 100V DO-41
VB20100SG-E3/4W
VB20100SG-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 100V TO-263AB
1N6642U
1N6642U
Microsemi Corporation
DIODE GEN PURP 75V 300MA D5D
46DN06B02ELEMPRXPSA1
46DN06B02ELEMPRXPSA1
Infineon Technologies
DIODE GEN PURP 600V
SF47GHR0G
SF47GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
1N4008
1N4008
Rectron USA
DIODE GEN PURP 1200V 1A DO-41
RB521SM-60T2R
RB521SM-60T2R
Rohm Semiconductor
SCHOTTKY BARRIER DIODE

Related Product By Brand

BAT5405WE6327HTSA1
BAT5405WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
IPA105N15N3GXKSA1
IPA105N15N3GXKSA1
Infineon Technologies
MOSFET N-CH 150V 37A TO220-FP
IPAN80R360P7XKSA1
IPAN80R360P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 13A TO220
SPN01N60C3
SPN01N60C3
Infineon Technologies
MOSFET N-CH 650V 300MA SOT223-4
SPD03N60S5BTMA1
SPD03N60S5BTMA1
Infineon Technologies
MOSFET N-CH 600V 3.2A TO252-3
IRF7404QTRPBF
IRF7404QTRPBF
Infineon Technologies
MOSFET P-CH 20V 6.7A 8-SOIC
IRLR3715ZCTRLP
IRLR3715ZCTRLP
Infineon Technologies
MOSFET N-CH 20V 49A DPAK
CY7B994V-2BBXIT
CY7B994V-2BBXIT
Infineon Technologies
IC CLK BUFF 18OUT 200MHZ 100LBGA
MB90347DASPFV-GS-308E1
MB90347DASPFV-GS-308E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
S29GL256S90FHI013
S29GL256S90FHI013
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
S29GL256P11FFIS40
S29GL256P11FFIS40
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
S34ML01G200TFI500
S34ML01G200TFI500
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I