IDB45E60ATMA1
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Infineon Technologies IDB45E60ATMA1

Manufacturer No:
IDB45E60ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDB45E60ATMA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 71A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):71A (DC)
Voltage - Forward (Vf) (Max) @ If:2 V @ 45 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):140 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number IDB45E60ATMA1 IDB15E60ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Last Time Buy
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 71A (DC) 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If 2 V @ 45 A 2 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 140 ns 87 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Operating Temperature - Junction -55°C ~ 175°C -40°C ~ 175°C

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