IDB45E60ATMA1
  • Share:

Infineon Technologies IDB45E60ATMA1

Manufacturer No:
IDB45E60ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IDB45E60ATMA1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 71A TO263-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):71A (DC)
Voltage - Forward (Vf) (Max) @ If:2 V @ 45 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):140 ns
Current - Reverse Leakage @ Vr:50 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
37

Please send RFQ , we will respond immediately.

Similar Products

Part Number IDB45E60ATMA1 IDB15E60ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Last Time Buy
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 71A (DC) 29.2A (DC)
Voltage - Forward (Vf) (Max) @ If 2 V @ 45 A 2 V @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 140 ns 87 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V 50 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2 PG-TO263-3-2
Operating Temperature - Junction -55°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

US1G-13-F
US1G-13-F
Diodes Incorporated
DIODE GEN PURP 400V 1A SMA
MSE1PGHM3/89A
MSE1PGHM3/89A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A MICROSMP
V2FM12-M3/H
V2FM12-M3/H
Vishay General Semiconductor - Diodes Division
2A,120V,SMF,TRENCH SKY RECT.
PG4005_R2_00001
PG4005_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION RECTIF
FESB16CT-E3/81
FESB16CT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 16A TO263AB
1N8032-GA
1N8032-GA
GeneSiC Semiconductor
DIODE SCHOTTKY 650V 2.5A TO257
1N4001GPE-M3/54
1N4001GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4006-N-2-2-BP
1N4006-N-2-2-BP
Micro Commercial Co
DIODE GEN PURP 800V 1A DO-41
SK515C R7G
SK515C R7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A DO214AB
SFF1002GA C0G
SFF1002GA C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AB
MUR110-AP
MUR110-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
JANTXV1N6857UR-1/TR
JANTXV1N6857UR-1/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY

Related Product By Brand

BSP135L6906
BSP135L6906
Infineon Technologies
N-CHANNEL POWER MOSFET
FF225R65T3E3BPSA1
FF225R65T3E3BPSA1
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-XHP3K6
IKP20N65F5XKSA1
IKP20N65F5XKSA1
Infineon Technologies
IGBT TRENCH 650V 42A TO220-3
KP216K1409XTMA1
KP216K1409XTMA1
Infineon Technologies
IC ANLG ABSOLUTE PRES SNSR DSOF8
CYBT-353027-EVAL
CYBT-353027-EVAL
Infineon Technologies
MODULE KIT
CY22393ZXC-529
CY22393ZXC-529
Infineon Technologies
IC CLOCK GEN PROG 16TSSOP
CY8C20667-24LQXI
CY8C20667-24LQXI
Infineon Technologies
IC CAPSENCE 32K FLASH 48QFN
MB89697BPFM-G-226-BND
MB89697BPFM-G-226-BND
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90025EPMT-GS-117E1
MB90025EPMT-GS-117E1
Infineon Technologies
IC MCU 120LQFP
S25FS256SAGMFI003
S25FS256SAGMFI003
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
CY7C0241-15AXC
CY7C0241-15AXC
Infineon Technologies
IC SRAM 72KBIT PARALLEL 100TQFP
CY7C1565KV18-400BZC
CY7C1565KV18-400BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA