Infineon Technologies-IDB10S60C - Diodes - Rectifiers - Single Product Specifications and Latest Quotes

Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	600 V
Current - Average Rectified (Io):	10A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 10 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	140 µA @ 600 V
Capacitance @ Vr, F:	480pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Operating Temperature - Junction:	-55°C ~ 175°C

Infineon Technologies IDB10S60C