Infineon Technologies-IAUZ40N06S5N050ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	40A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs:	30.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2200 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	71W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8-33
Package / Case:	8-PowerTDFN

Infineon Technologies IAUZ40N06S5N050ATMA1