Infineon Technologies-IAUT150N10S5N035ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	3.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:	87 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6110 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	166W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-HSOF-8-1
Package / Case:	8-PowerSFN

Infineon Technologies IAUT150N10S5N035ATMA1