IAUS200N08S5N023ATMA1
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Infineon Technologies IAUS200N08S5N023ATMA1

Manufacturer No:
IAUS200N08S5N023ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IAUS200N08S5N023ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 200A HSOG-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOG-8-1
Package / Case:8-PowerSMD, Gull Wing
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Similar Products

Part Number IAUS200N08S5N023ATMA1 IAUT200N08S5N023ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 130µA 3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V 7670 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 200W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOG-8-1 PG-HSOF-8-1
Package / Case 8-PowerSMD, Gull Wing 8-PowerSFN

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