Infineon Technologies-IAUC60N04S6L045HATMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	60A (Tj)
Rds On (Max) @ Id, Vgs:	4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1136pF @ 25V
Power - Max:	52W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8-57

Infineon Technologies IAUC60N04S6L045HATMA1